Graphene-Assisted Antioxidation of Tungsten Disulfide Monolayers : Substrate and Electric-Field Effect

© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 18 vom: 05. Mai
1. Verfasser: Kang, Kyungnam (VerfasserIn)
Weitere Verfasser: Godin, Kyle, Kim, Young Duck, Fu, Shichen, Cha, Wujoon, Hone, James, Yang, Eui-Hyeok
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2017
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article WS2/graphene heterostructures antioxidation of WS2 monolayers epitaxial growth surface electric field
LEADER 01000naa a22002652 4500
001 NLM26926535X
003 DE-627
005 20231224224223.0
007 cr uuu---uuuuu
008 231224s2017 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201603898  |2 doi 
028 5 2 |a pubmed24n0897.xml 
035 |a (DE-627)NLM26926535X 
035 |a (NLM)28234414 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Kang, Kyungnam  |e verfasserin  |4 aut 
245 1 0 |a Graphene-Assisted Antioxidation of Tungsten Disulfide Monolayers  |b Substrate and Electric-Field Effect 
264 1 |c 2017 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 18.07.2018 
500 |a Date Revised 30.09.2020 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a Transition metal dichalcogenides (TMDs) have emerged as promising materials to complement graphene for advanced optoelectronics. However, irreversible degradation of chemical vapor deposition-grown monolayer TMDs via oxidation under ambient conditions limits applications of TMD-based devices. Here, the growth of oxidation-resistant tungsten disulfide (WS2 ) monolayers on graphene is demonstrated, and the mechanism of oxidation of WS2 on SiO2 , graphene/SiO2 , and on graphene suspended in air is elucidated. While WS2 on a SiO2 substrate begins oxidation within weeks, epitaxially grown WS2 on suspended graphene does not show any sign of oxidation, attributed to the screening effect of surface electric field caused by the substrate. The control of a local oxidation of WS2 on a SiO2 substrate by a local electric field created using an atomic force microscope tip is also demonstrated 
650 4 |a Journal Article 
650 4 |a WS2/graphene heterostructures 
650 4 |a antioxidation of WS2 monolayers 
650 4 |a epitaxial growth 
650 4 |a surface electric field 
700 1 |a Godin, Kyle  |e verfasserin  |4 aut 
700 1 |a Kim, Young Duck  |e verfasserin  |4 aut 
700 1 |a Fu, Shichen  |e verfasserin  |4 aut 
700 1 |a Cha, Wujoon  |e verfasserin  |4 aut 
700 1 |a Hone, James  |e verfasserin  |4 aut 
700 1 |a Yang, Eui-Hyeok  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 29(2017), 18 vom: 05. Mai  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:29  |g year:2017  |g number:18  |g day:05  |g month:05 
856 4 0 |u http://dx.doi.org/10.1002/adma.201603898  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 29  |j 2017  |e 18  |b 05  |c 05