Ultrabroadband MoS2 Photodetector with Spectral Response from 445 to 2717 nm

© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 17 vom: 06. Mai
1. Verfasser: Xie, Ying (VerfasserIn)
Weitere Verfasser: Zhang, Bo, Wang, Shuxian, Wang, Dong, Wang, Aizhu, Wang, Zeyan, Yu, Haohai, Zhang, Huaijin, Chen, Yanxue, Zhao, Mingwen, Huang, Baibiao, Mei, Liangmo, Wang, Jiyang
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2017
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article MoS2 sheets band structure control component deviation optical absorption ultrabroadband photodetectors
LEADER 01000naa a22002652 4500
001 NLM269220593
003 DE-627
005 20231224224135.0
007 cr uuu---uuuuu
008 231224s2017 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201605972  |2 doi 
028 5 2 |a pubmed24n0897.xml 
035 |a (DE-627)NLM269220593 
035 |a (NLM)28229557 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Xie, Ying  |e verfasserin  |4 aut 
245 1 0 |a Ultrabroadband MoS2 Photodetector with Spectral Response from 445 to 2717 nm 
264 1 |c 2017 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 18.07.2018 
500 |a Date Revised 30.09.2020 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a Photodetectors with excellent detecting properties over a broad spectral range have advantages for the application in many optoelectronic devices. Introducing imperfections to the atomic lattices in semiconductors is a significant way for tuning the bandgap and achieving broadband response, but the imperfection may renovate their intrinsic properties far from the desire. Here, by controlling the deviation from the perfection of the atomic lattice, ultrabroadband multilayer MoS2 photodetectors are originally designed and realized with the detection range over 2000 nm from 445 nm (blue) to 2717 nm (mid-infrared). Associated with the narrow but nonzero bandgap and large photoresponsivity, the optimized deviation from the perfection of MoS2 samples is theoretically found and experimentally achieved aiming at the ultrabroadband photoresponse. By the photodetection characterization, the responsivity and detectivity of the present photodetectors are investigated in the wavelength range from 445 to 2717 nm with the maximum values of 50.7 mA W-1 and 1.55 × 109 Jones, respectively, which represent the most broadband MoS2 photodetectors. Based on the easy manipulation, low cost, large scale, and broadband photoresponse, this present detector has significant potential for the applications in optoelectronics and electronics in the future 
650 4 |a Journal Article 
650 4 |a MoS2 sheets 
650 4 |a band structure 
650 4 |a control component deviation 
650 4 |a optical absorption 
650 4 |a ultrabroadband photodetectors 
700 1 |a Zhang, Bo  |e verfasserin  |4 aut 
700 1 |a Wang, Shuxian  |e verfasserin  |4 aut 
700 1 |a Wang, Dong  |e verfasserin  |4 aut 
700 1 |a Wang, Aizhu  |e verfasserin  |4 aut 
700 1 |a Wang, Zeyan  |e verfasserin  |4 aut 
700 1 |a Yu, Haohai  |e verfasserin  |4 aut 
700 1 |a Zhang, Huaijin  |e verfasserin  |4 aut 
700 1 |a Chen, Yanxue  |e verfasserin  |4 aut 
700 1 |a Zhao, Mingwen  |e verfasserin  |4 aut 
700 1 |a Huang, Baibiao  |e verfasserin  |4 aut 
700 1 |a Mei, Liangmo  |e verfasserin  |4 aut 
700 1 |a Wang, Jiyang  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 29(2017), 17 vom: 06. Mai  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:29  |g year:2017  |g number:17  |g day:06  |g month:05 
856 4 0 |u http://dx.doi.org/10.1002/adma.201605972  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 29  |j 2017  |e 17  |b 06  |c 05