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231224s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201605049
|2 doi
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|a pubmed24n0896.xml
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|a eng
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|a Schweiger, Sebastian
|e verfasserin
|4 aut
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|a Designing Strained Interface Heterostructures for Memristive Devices
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 18.07.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Ionic heterostructures are used as a strain-modulated memristive device based on the model system Gd0.1 Ce0.9 O2-δ /Er2 O3 to set and tune the property of "memristance." The modulation of interfacial strain and the interface count is used to engineer the Roff /Ron ratio and the persistence of the system. A model describing the variation of mixed ionic-electronic mobilities and defect concentrations is presented
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|a Journal Article
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|a interfaces
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|a lattice strain
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|a raman
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|a resistive switching
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|a Pfenninger, Reto
|e verfasserin
|4 aut
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1 |
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|a Bowman, William J
|e verfasserin
|4 aut
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1 |
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|a Aschauer, Ulrich
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Rupp, Jennifer L M
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 15 vom: 19. Apr.
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|u http://dx.doi.org/10.1002/adma.201605049
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