High-Mobility Multilayered MoS2 Flakes with Low Contact Resistance Grown by Chemical Vapor Deposition

High-Mobility Multilayered MoS2 Flakes with Low Contact Resistance Grown by Chemical Vapor Deposition

© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 13 vom: 06. Apr.
1. Verfasser: Zheng, Jingying (VerfasserIn)
Weitere Verfasser: Yan, Xingxu, Lu, Zhixing, Qiu, Hailong, Xu, Guanchen, Zhou, Xu, Wang, Peng, Pan, Xiaoqing, Liu, Kaihui, Jiao, Liying
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2017
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article MoS2 chemical vapor deposition field-effect transistors mobility multilayer
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500 |a Citation Status PubMed-not-MEDLINE 
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520 |a The controlled synthesis of high-quality multilayer (ML) MoS2 flakes with gradually shrinking basal planes by chemical vapor deposition (CVD) is demonstrated. These CVD-grown ML MoS2 flakes exhibit much higher mobility and current density than mechanically exfoliated ML flakes due to the reduced contact resistance which mainly resulted from direct contact between the lower MoS2 layers and electrodes 
650 4 |a Journal Article 
650 4 |a MoS2 
650 4 |a chemical vapor deposition 
650 4 |a field-effect transistors 
650 4 |a mobility 
650 4 |a multilayer 
700 1 |a Yan, Xingxu  |e verfasserin  |4 aut 
700 1 |a Lu, Zhixing  |e verfasserin  |4 aut 
700 1 |a Qiu, Hailong  |e verfasserin  |4 aut 
700 1 |a Xu, Guanchen  |e verfasserin  |4 aut 
700 1 |a Zhou, Xu  |e verfasserin  |4 aut 
700 1 |a Wang, Peng  |e verfasserin  |4 aut 
700 1 |a Pan, Xiaoqing  |e verfasserin  |4 aut 
700 1 |a Liu, Kaihui  |e verfasserin  |4 aut 
700 1 |a Jiao, Liying  |e verfasserin  |4 aut 
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