Anatomy of Ag/Hafnia-Based Selectors with 1010 Nonlinearity

Anatomy of Ag/Hafnia-Based Selectors with 1010 Nonlinearity

© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 12 vom: 02. März
Auteur principal: Midya, Rivu (Auteur)
Autres auteurs: Wang, Zhongrui, Zhang, Jiaming, Savel'ev, Sergey E, Li, Can, Rao, Mingyi, Jang, Moon Hyung, Joshi, Saumil, Jiang, Hao, Lin, Peng, Norris, Kate, Ge, Ning, Wu, Qing, Barnell, Mark, Li, Zhiyong, Xin, Huolin L, Williams, R Stanley, Xia, Qiangfei, Yang, J Joshua
Format: Article en ligne
Langue:English
Publié: 2017
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article memory memristor nonlinearity neuromorphic computing selector
Description
Résumé:© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A novel Ag/oxide-based threshold switching device with attractive features including ≈1010 nonlinearity is developed. High-resolution transmission electron microscopic analysis of the nanoscale crosspoint device suggests that elongation of an Ag nanoparticle under voltage bias followed by spontaneous reformation of a more spherical shape after power off is responsible for the observed threshold switching
Description:Date Completed 18.07.2018
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201604457