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231224s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201601575
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|a eng
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|a Huang, Kuo-Feng
|e verfasserin
|4 aut
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|a Initialization-Free Multilevel States Driven by Spin-Orbit Torque Switching
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|c 2017
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|a Text
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 18.07.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a By engineering multidomain formation in Co/Pt multilayers, it is demonstrated how multilevel storage can be achieved by spin-orbit torque switching. It is rather remarkable that, by modulating the writing pulse conditions, the final magnetization states can be controlled, independent of the initial configurations. The initialization-free multilevel memory advances the spin-orbit-torque magnetic random access memory to higher storage density for practical applications
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|a Journal Article
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|a Co/Pt multilayers
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|a initialization-free
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|a multilevel
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|a spin-orbit torque
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|a Wang, Ding-Shuo
|e verfasserin
|4 aut
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|a Tsai, Ming-Han
|e verfasserin
|4 aut
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|a Lin, Hsiu-Hau
|e verfasserin
|4 aut
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|a Lai, Chih-Huang
|e verfasserin
|4 aut
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|t Advanced materials (Deerfield Beach, Fla.)
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|u http://dx.doi.org/10.1002/adma.201601575
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