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231224s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201605407
|2 doi
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|a pubmed24n0891.xml
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|a (DE-627)NLM267518196
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|a (NLM)28028843
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Wu, Xu
|e verfasserin
|4 aut
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|a Epitaxial Growth and Air-Stability of Monolayer Antimonene on PdTe2
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 18.07.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Monolayer antimonene is fabricated on PdTe2 by an epitaxial method. Monolayer antimonene is theoretically predicted to have a large bandgap for nanoelectronic devices. Air-exposure experiments indicate amazing chemical stability, which is great for device fabrication. A method to fabricate high-quality monolayer antimonene with several great properties for novel electronic and optoelectronic applications is provided
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|a Journal Article
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|a 2D
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|a PdTe2
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|a antimonene
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|a epitaxial growth
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|a honeycomb lattice
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|a Shao, Yan
|e verfasserin
|4 aut
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|a Liu, Hang
|e verfasserin
|4 aut
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|a Feng, Zili
|e verfasserin
|4 aut
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|a Wang, Ye-Liang
|e verfasserin
|4 aut
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|a Sun, Jia-Tao
|e verfasserin
|4 aut
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|a Liu, Chen
|e verfasserin
|4 aut
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|a Wang, Jia-Ou
|e verfasserin
|4 aut
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|a Liu, Zhong-Liu
|e verfasserin
|4 aut
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|a Zhu, Shi-Yu
|e verfasserin
|4 aut
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|a Wang, Yu-Qi
|e verfasserin
|4 aut
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|a Du, Shi-Xuan
|e verfasserin
|4 aut
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|a Shi, You-Guo
|e verfasserin
|4 aut
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|a Ibrahim, Kurash
|e verfasserin
|4 aut
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|a Gao, Hong-Jun
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 11 vom: 24. März
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:29
|g year:2017
|g number:11
|g day:24
|g month:03
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|u http://dx.doi.org/10.1002/adma.201605407
|3 Volltext
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