High-Performance, Air-Stable Field-Effect Transistors Based on Heteroatom-Substituted Naphthalenediimide-Benzothiadiazole Copolymers Exhibiting Ultrahigh Electron Mobility up to 8.5 cm V-1 s-1

High-Performance, Air-Stable Field-Effect Transistors Based on Heteroatom-Substituted Naphthalenediimide-Benzothiadiazole Copolymers Exhibiting Ultrahigh Electron Mobility up to 8.5 cm V-1 s-1

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 4 vom: 17. Jan.
1. Verfasser: Zhao, Zhiyuan (VerfasserIn)
Weitere Verfasser: Yin, Zhihong, Chen, Huajie, Zheng, Liping, Zhu, Chunguang, Zhang, Long, Tan, Songting, Wang, Hanlin, Guo, Yunlong, Tang, Qingxin, Liu, Yunqi
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2017
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article field-effect transistors heteroatom substitute naphthalenediimide
Beschreibung
Zusammenfassung:© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Rational heteroatom engineering is applied to develop high-performance electron-transporting naphthalenediimide copolymers. Top-gate field-effect transistors fabricated from selenophene-containing polymers achieve an ultrahigh electron mobility of 8.5 cm2 V-1 s-1 and excellent air-stability. The results demonstrate that the incorporation of selenophene heterocycles into the polymers can improve the film-forming ability, intermolecular interaction, and carrier transport significantly
Beschreibung:Date Completed 18.07.2018
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201602410