Improved Li+ Storage through Homogeneous N-Doping within Highly Branched Tubular Graphitic Foam

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 6 vom: 01. Feb.
1. Verfasser: Dong, Jinyang (VerfasserIn)
Weitere Verfasser: Xue, Yanming, Zhang, Chao, Weng, Qunhong, Dai, Pengcheng, Yang, Yijun, Zhou, Min, Li, Cuiling, Cui, Qiuhong, Kang, Xiaohong, Tang, Chengchun, Bando, Yoshio, Golberg, Dmitri, Wang, Xi
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2017
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article highly branched graphitic foams homogeneous N-doping improved Li+-ions storage in situ TEM lithium ion batteries
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520 |a A novel carbon structure, highly branched homogeneous-N-doped graphitic (BNG) tubular foam, is designed via a novel N, N-dimethylformamide (DMF)-mediated chemical vapor deposition method. More structural defects are found at the branched portions as compared with the flat tube domains providing abundant active sites and spacious reservoirs for Li+ storage. An individual BNG branch nanobattery is constructed and tested using in situ transmission electron microscopy and the lithiation process is directly visualized in real time 
650 4 |a Journal Article 
650 4 |a highly branched graphitic foams 
650 4 |a homogeneous N-doping 
650 4 |a improved Li+-ions storage 
650 4 |a in situ TEM 
650 4 |a lithium ion batteries 
700 1 |a Xue, Yanming  |e verfasserin  |4 aut 
700 1 |a Zhang, Chao  |e verfasserin  |4 aut 
700 1 |a Weng, Qunhong  |e verfasserin  |4 aut 
700 1 |a Dai, Pengcheng  |e verfasserin  |4 aut 
700 1 |a Yang, Yijun  |e verfasserin  |4 aut 
700 1 |a Zhou, Min  |e verfasserin  |4 aut 
700 1 |a Li, Cuiling  |e verfasserin  |4 aut 
700 1 |a Cui, Qiuhong  |e verfasserin  |4 aut 
700 1 |a Kang, Xiaohong  |e verfasserin  |4 aut 
700 1 |a Tang, Chengchun  |e verfasserin  |4 aut 
700 1 |a Bando, Yoshio  |e verfasserin  |4 aut 
700 1 |a Golberg, Dmitri  |e verfasserin  |4 aut 
700 1 |a Wang, Xi  |e verfasserin  |4 aut 
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