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231224s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201604003
|2 doi
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|a pubmed24n0887.xml
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|a (DE-627)NLM266333559
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|a (NLM)27862357
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Ma, Teng
|e verfasserin
|4 aut
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|a Ultrastrong Boron Frameworks in ZrB12
|b A Highway for Electron Conducting
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 18.07.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a ZrB12 , with a high symmetrical cubic structure, possesses both high hardness ≈27.0 GPa and ultralow electrical resistivity ≈18 µΩ cm at room temperature. Both the superior conductivity and hardness of ZrB12 are associated with the extended BB 3D covalent bonding network as it is not only favorable for achieving high hardness, but also provides conducting channels for transporting electrons
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|a Journal Article
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|a 3D boron frameworks
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|a delocalized π-bonds
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|a metallic electric resistivity
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|a Li, Hui
|e verfasserin
|4 aut
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|a Zheng, Xu
|e verfasserin
|4 aut
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|a Wang, Shanmin
|e verfasserin
|4 aut
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|a Wang, Xiancheng
|e verfasserin
|4 aut
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|a Zhao, Huaizhou
|e verfasserin
|4 aut
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|a Han, Songbai
|e verfasserin
|4 aut
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|a Liu, Jian
|e verfasserin
|4 aut
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|a Zhang, Ruifeng
|e verfasserin
|4 aut
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|a Zhu, Pinwen
|e verfasserin
|4 aut
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|a Long, Youwen
|e verfasserin
|4 aut
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|a Cheng, Jinguang
|e verfasserin
|4 aut
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|a Ma, Yanming
|e verfasserin
|4 aut
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|a Zhao, Yusheng
|e verfasserin
|4 aut
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|a Jin, Changqing
|e verfasserin
|4 aut
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|a Yu, Xiaohui
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 3 vom: 20. Jan.
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:29
|g year:2017
|g number:3
|g day:20
|g month:01
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|u http://dx.doi.org/10.1002/adma.201604003
|3 Volltext
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|a GBV_USEFLAG_A
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|a SYSFLAG_A
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|a GBV_NLM
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|a GBV_ILN_350
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|a AR
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|d 29
|j 2017
|e 3
|b 20
|c 01
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