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231224s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201604185
|2 doi
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|a pubmed24n0887.xml
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|a (NLM)27859857
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|a eng
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|a Volobuev, Valentine V
|e verfasserin
|4 aut
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|a Giant Rashba Splitting in Pb1-x Snx Te (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 18.07.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The topological properties of lead-tin chalcogenide topological crystalline insulators can be widely tuned by temperature and composition. It is shown that bulk Bi doping of epitaxial Pb1-x Snx Te (111) films induces a giant Rashba splitting at the surface that can be tuned by the doping level. Tight binding calculations identify their origin as Fermi level pinning by trap states at the surface
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|a Journal Article
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|a IV-VI semiconductors
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|a Rashba effect
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|a crystalline insulators
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|a molecular beam epitaxy
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|a photoemission spectroscopy
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|a Mandal, Partha S
|e verfasserin
|4 aut
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|a Galicka, Marta
|e verfasserin
|4 aut
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|a Caha, Ondřej
|e verfasserin
|4 aut
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|a Sánchez-Barriga, Jaime
|e verfasserin
|4 aut
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|a Di Sante, Domenico
|e verfasserin
|4 aut
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|a Varykhalov, Andrei
|e verfasserin
|4 aut
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|a Khiar, Amir
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|a Picozzi, Silvia
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|a Bauer, Günther
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|a Kacman, Perla
|e verfasserin
|4 aut
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|a Buczko, Ryszard
|e verfasserin
|4 aut
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|a Rader, Oliver
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|a Springholz, Gunther
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 3 vom: 06. Jan.
|w (DE-627)NLM098206397
|x 1521-4095
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|g volume:29
|g year:2017
|g number:3
|g day:06
|g month:01
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|u http://dx.doi.org/10.1002/adma.201604185
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