Photon-Gated Spin Transistor

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 2 vom: 12. Jan.
1. Verfasser: Li, Fan (VerfasserIn)
Weitere Verfasser: Song, Cheng, Cui, Bin, Peng, Jingjing, Gu, Youdi, Wang, Guangyue, Pan, Feng
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2017
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article manganite optical gates spin transistors
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520 |a A new type of spin transistor with an optical gate is proposed with partial exposure of the device, where spin scattering is enhanced under light illumination due to the photon-induced minor spins. Consequently a reproducible transient gate operation of reisitance via optical methods is observed, as ascribed to the nature of spin excitation 
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700 1 |a Peng, Jingjing  |e verfasserin  |4 aut 
700 1 |a Gu, Youdi  |e verfasserin  |4 aut 
700 1 |a Wang, Guangyue  |e verfasserin  |4 aut 
700 1 |a Pan, Feng  |e verfasserin  |4 aut 
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