Correlation between Chemical Dopants and Topological Defects in Catalytically Active Nanoporous Graphene

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 48 vom: 14. Dez., Seite 10644-10651
1. Verfasser: Ito, Yoshikazu (VerfasserIn)
Weitere Verfasser: Shen, Yuhao, Hojo, Daisuke, Itagaki, Yoji, Fujita, Takeshi, Chen, Linghan, Aida, Tsutomu, Tang, Zheng, Adschiri, Tadafumi, Chen, Mingwei
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article chemical vapor deposition hydrogen evolution reaction nanoparticles nanoporous graphene nitrogen-sulfur-phosphorus co-doping
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520 |a The interplay between chemical dopants and topological defects plays a crucial role in electrocatalysis of doped graphene. By systematically tuning the curvatures, thereby the density of topological defects, of 3D nanoporous graphene, the intrinsic correlation of topological defects with chemical doping contents and dopant configurations is revealed, shining lights into the structural and chemical origins of HER activities of graphene 
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700 1 |a Shen, Yuhao  |e verfasserin  |4 aut 
700 1 |a Hojo, Daisuke  |e verfasserin  |4 aut 
700 1 |a Itagaki, Yoji  |e verfasserin  |4 aut 
700 1 |a Fujita, Takeshi  |e verfasserin  |4 aut 
700 1 |a Chen, Linghan  |e verfasserin  |4 aut 
700 1 |a Aida, Tsutomu  |e verfasserin  |4 aut 
700 1 |a Tang, Zheng  |e verfasserin  |4 aut 
700 1 |a Adschiri, Tadafumi  |e verfasserin  |4 aut 
700 1 |a Chen, Mingwei  |e verfasserin  |4 aut 
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