Controlling Chain Conformations of High-k Fluoropolymer Dielectrics to Enhance Charge Mobilities in Rubrene Single-Crystal Field-Effect Transistors

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 45 vom: 15. Dez., Seite 10095-10102
1. Verfasser: Adhikari, Jwala M (VerfasserIn)
Weitere Verfasser: Gadinski, Matthew R, Li, Qi, Sun, Kaige G, Reyes-Martinez, Marcos A, Iagodkine, Elissei, Briseno, Alejandro L, Jackson, Thomas N, Wang, Qing, Gomez, Enrique D
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article dipolar disorder high-k organic single-crystal field-effect transistors photopatternable fluoropolymer gate dielectrics rubrene
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520 |a A novel photopatternable high-k fluoropolymer, poly(vinylidene fluoride-bromotrifluoroethylene) P(VDF-BTFE), with a dielectric constant (k) between 8 and 11 is demonstrated in thin-film transistors. Crosslinking P(VDF-BTFE) reduces energetic disorder at the dielectric-semiconductor interface by controlling the chain conformations of P(VDF-BTFE), thereby leading to approximately a threefold enhancement in the charge mobility of rubrene single-crystal field-effect transistors 
650 4 |a Journal Article 
650 4 |a dipolar disorder 
650 4 |a high-k 
650 4 |a organic single-crystal field-effect transistors 
650 4 |a photopatternable fluoropolymer gate dielectrics 
650 4 |a rubrene 
700 1 |a Gadinski, Matthew R  |e verfasserin  |4 aut 
700 1 |a Li, Qi  |e verfasserin  |4 aut 
700 1 |a Sun, Kaige G  |e verfasserin  |4 aut 
700 1 |a Reyes-Martinez, Marcos A  |e verfasserin  |4 aut 
700 1 |a Iagodkine, Elissei  |e verfasserin  |4 aut 
700 1 |a Briseno, Alejandro L  |e verfasserin  |4 aut 
700 1 |a Jackson, Thomas N  |e verfasserin  |4 aut 
700 1 |a Wang, Qing  |e verfasserin  |4 aut 
700 1 |a Gomez, Enrique D  |e verfasserin  |4 aut 
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