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231224s2016 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201602873
|2 doi
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|a pubmed24n0883.xml
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|a (NLM)27717022
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|a DE-627
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|e rakwb
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|a eng
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|a Adhikari, Jwala M
|e verfasserin
|4 aut
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|a Controlling Chain Conformations of High-k Fluoropolymer Dielectrics to Enhance Charge Mobilities in Rubrene Single-Crystal Field-Effect Transistors
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|c 2016
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 17.07.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A novel photopatternable high-k fluoropolymer, poly(vinylidene fluoride-bromotrifluoroethylene) P(VDF-BTFE), with a dielectric constant (k) between 8 and 11 is demonstrated in thin-film transistors. Crosslinking P(VDF-BTFE) reduces energetic disorder at the dielectric-semiconductor interface by controlling the chain conformations of P(VDF-BTFE), thereby leading to approximately a threefold enhancement in the charge mobility of rubrene single-crystal field-effect transistors
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|a Journal Article
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|a dipolar disorder
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|a high-k
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|a organic single-crystal field-effect transistors
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|a photopatternable fluoropolymer gate dielectrics
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|a rubrene
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|a Gadinski, Matthew R
|e verfasserin
|4 aut
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|a Li, Qi
|e verfasserin
|4 aut
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|a Sun, Kaige G
|e verfasserin
|4 aut
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|a Reyes-Martinez, Marcos A
|e verfasserin
|4 aut
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|a Iagodkine, Elissei
|e verfasserin
|4 aut
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|a Briseno, Alejandro L
|e verfasserin
|4 aut
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|a Jackson, Thomas N
|e verfasserin
|4 aut
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|a Wang, Qing
|e verfasserin
|4 aut
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|a Gomez, Enrique D
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 28(2016), 45 vom: 15. Dez., Seite 10095-10102
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:28
|g year:2016
|g number:45
|g day:15
|g month:12
|g pages:10095-10102
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|u http://dx.doi.org/10.1002/adma.201602873
|3 Volltext
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