Novel Organic Schottky Barrier Diode Created in a Single Planar Polymer Film

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 43 vom: 13. Nov., Seite 9545-9549
Auteur principal: Wang, Hong (Auteur)
Autres auteurs: Hsu, Jui-Hung, Yang, Gang, Yu, Choongho
Format: Article en ligne
Langue:English
Publié: 2016
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article PEDOT Schottky barriers high current density organic diodes planar structures rectifier
LEADER 01000caa a22002652 4500
001 NLM264271556
003 DE-627
005 20250220154628.0
007 cr uuu---uuuuu
008 231224s2016 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201602930  |2 doi 
028 5 2 |a pubmed25n0880.xml 
035 |a (DE-627)NLM264271556 
035 |a (NLM)27620845 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Wang, Hong  |e verfasserin  |4 aut 
245 1 0 |a Novel Organic Schottky Barrier Diode Created in a Single Planar Polymer Film 
264 1 |c 2016 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 17.07.2018 
500 |a Date Revised 30.09.2020 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a An organic Schottky barrier diode is created in a single planar PEDOT:Tos film by treating a half of the PEDOT:Tos film with TDAE vapor. Current is rectified in one direction by the Schottky barrier at the junction. The unique planar structure made of a single film greatly reduces defects, resulting in a remarkably high current density with a high rectification ratio, as well as making it suitable for ink-jet-type or roll-to-roll printing techniques 
650 4 |a Journal Article 
650 4 |a PEDOT 
650 4 |a Schottky barriers 
650 4 |a high current density 
650 4 |a organic diodes 
650 4 |a planar structures 
650 4 |a rectifier 
700 1 |a Hsu, Jui-Hung  |e verfasserin  |4 aut 
700 1 |a Yang, Gang  |e verfasserin  |4 aut 
700 1 |a Yu, Choongho  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 28(2016), 43 vom: 13. Nov., Seite 9545-9549  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:28  |g year:2016  |g number:43  |g day:13  |g month:11  |g pages:9545-9549 
856 4 0 |u http://dx.doi.org/10.1002/adma.201602930  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 28  |j 2016  |e 43  |b 13  |c 11  |h 9545-9549