Contact Resistance Effects in Highly Doped Organic Electrochemical Transistors

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 39 vom: 11. Okt., Seite 8766-8770
1. Verfasser:	Kaphle, Vikash (VerfasserIn)
Weitere Verfasser:	Liu, Shiyi, Al-Shadeedi, Akram, Keum, Chang-Min, Lüssem, Björn
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2016
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article contact resistance organic electrochemical transistors transconductance


LEADER	01000caa a22002652c 4500
001	NLM263314642
003	DE-627
005	20250220125244.0
007	cr uuu---uuuuu
008	231224s2016 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.1002/adma.201602125 \|2 doi
028	5	2	\|a pubmed25n0877.xml
035			\|a (DE-627)NLM263314642
035			\|a (NLM)27511804
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
100	1		\|a Kaphle, Vikash \|e verfasserin \|4 aut
245	1	0	\|a Contact Resistance Effects in Highly Doped Organic Electrochemical Transistors
264		1	\|c 2016
336			\|a Text \|b txt \|2 rdacontent
337			\|a ƒaComputermedien \|b c \|2 rdamedia
338			\|a ƒa Online-Ressource \|b cr \|2 rdacarrier
500			\|a Date Completed 17.07.2018
500			\|a Date Revised 01.10.2020
500			\|a published: Print-Electronic
500			\|a Citation Status PubMed-not-MEDLINE
520			\|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
520			\|a Injection at the source contact critically determines the behavior of depletion-type organic electrochemical transistors (OETs). The contact resistance of OETs increases exponentially with the gate voltage and strongly influences the modulation of the drain current by the gate voltage over a wide voltage range. A modified standard model accounting contact resistance can explain the particular shape of the transconductance
650		4	\|a Journal Article
650		4	\|a contact resistance
650		4	\|a organic electrochemical transistors
650		4	\|a transconductance
700	1		\|a Liu, Shiyi \|e verfasserin \|4 aut
700	1		\|a Al-Shadeedi, Akram \|e verfasserin \|4 aut
700	1		\|a Keum, Chang-Min \|e verfasserin \|4 aut
700	1		\|a Lüssem, Björn \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Advanced materials (Deerfield Beach, Fla.) \|d 1998 \|g 28(2016), 39 vom: 11. Okt., Seite 8766-8770 \|w (DE-627)NLM098206397 \|x 1521-4095 \|7 nnas
773	1	8	\|g volume:28 \|g year:2016 \|g number:39 \|g day:11 \|g month:10 \|g pages:8766-8770
856	4	0	\|u http://dx.doi.org/10.1002/adma.201602125 \|3 Volltext
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_NLM
912			\|a GBV_ILN_350
951			\|a AR
952			\|d 28 \|j 2016 \|e 39 \|b 11 \|c 10 \|h 8766-8770