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231224s2016 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201602963
|2 doi
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|a pubmed24n0877.xml
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|a eng
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|a Sahoo, Roshnee
|e verfasserin
|4 aut
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|a Compensated Ferrimagnetic Tetragonal Heusler Thin Films for Antiferromagnetic Spintronics
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|c 2016
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|a Date Completed 17.07.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Fully compensated ferrimagnets with tetragonal crystal structure have the potential for large spin-polarization and strong out-of-plane magnetic anisotropy; hence, they are ideal candidates for high-density-memory applications. Tetragonal Heusler thin films with compensated magnetic state are realized by substitution of Pt in Mn3-x Ptx Ga. Furthermore, the bilayer formed from compensated/uncompensated Mn-Pt-Ga layers is utilized to accomplish exchange bias up to room temperature
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|a Journal Article
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|a Heuslers
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|a antiferromagnetic spintronics
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|a compensated ferrimagnets
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|a exchange bias
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|a tetragonal thin films
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|a Wollmann, Lukas
|e verfasserin
|4 aut
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|a Selle, Susanne
|e verfasserin
|4 aut
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|a Höche, Thomas
|e verfasserin
|4 aut
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|a Ernst, Benedikt
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|4 aut
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|a Kalache, Adel
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|a Shekhar, Chandra
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|a Kumar, Nitesh
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|a Chadov, Stanislav
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|a Felser, Claudia
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|a Parkin, Stuart S P
|e verfasserin
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|a Nayak, Ajaya K
|e verfasserin
|4 aut
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|t Advanced materials (Deerfield Beach, Fla.)
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|g 28(2016), 38 vom: 01. Okt., Seite 8499-8504
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