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231224s2016 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201602854
|2 doi
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|a pubmed24n0876.xml
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|a eng
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| 100 |
1 |
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|a Wu, Wenzhuo
|e verfasserin
|4 aut
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|a Piezophototronic Effect in Single-Atomic-Layer MoS2 for Strain-Gated Flexible Optoelectronics
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|c 2016
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 17.07.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Strain-gated flexible optoelectronics are reported based on monolayer MoS2 . Utilizing the piezoelectric polarization created at the metal-MoS2 interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic-layer-thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel optoelectronics
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|a Journal Article
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|a adaptive optoelectronics
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|a monolayer MoS2
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|a piezophototronic effect
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|a Wang, Lei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yu, Ruomeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Yuanyue
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wei, Su-Huai
|e verfasserin
|4 aut
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| 700 |
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|a Hone, James
|e verfasserin
|4 aut
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| 700 |
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|a Wang, Zhong Lin
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 28(2016), 38 vom: 28. Okt., Seite 8463-8468
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:28
|g year:2016
|g number:38
|g day:28
|g month:10
|g pages:8463-8468
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|u http://dx.doi.org/10.1002/adma.201602854
|3 Volltext
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