Mass Production of Nanogap Electrodes toward Robust Resistive Random Access Memory

Mass Production of Nanogap Electrodes toward Robust Resistive Random Access Memory

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 37 vom: 16. Okt., Seite 8227-8233
1. Verfasser: Cui, Ajuan (VerfasserIn)
Weitere Verfasser: Liu, Zhe, Dong, Huanli, Yang, Fangxu, Zhen, Yonggang, Li, Wuxia, Li, Junjie, Gu, Changzhi, Zhang, Xiaotao, Li, Rongjin, Hu, Wenping
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article nanofabrication nanogap electrodes nonvolatile resistive switches
Beschreibung
Zusammenfassung:© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Nanogap electrodes arrays are fabricated by combining atomic layer deposition, adhesive tape, and chemical etching. A unipolar nonvolatile resistive-switching behavior is identified in the nanogap electrodes, showing stable, robust performance and the multibit storage ability, demonstrating great potential in ultrahigh-density storage. The formation and dissolution of Si conductive filaments and migration of Au atoms is the mechanism behind the resistive switching
Beschreibung:Date Completed 17.07.2018
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201603124