High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure

High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 36 vom: 07. Sept., Seite 7978-7983
1. Verfasser: Rong, Xin (VerfasserIn)
Weitere Verfasser: Wang, Xinqiang, Ivanov, Sergey V, Jiang, Xinhe, Chen, Guang, Wang, Ping, Wang, Weiying, He, Chenguang, Wang, Tao, Schulz, Tobias, Albrecht, Martin, Jmerik, Valentin N, Toropov, Alexey A, Ratnikov, Viacheslav V, Kozlovsky, Vladimir I, Martovitsky, Victor P, Jin, Peng, Xu, Fujun, Yang, Xuelin, Qin, Zhixin, Ge, Weikun, Shi, Junjie, Shen, Bo
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article e-beam pumping high output power mid-UV light sources molecular beam epitaxy quasi-2D GaN
Beschreibung
Zusammenfassung:© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Quasi-2D GaN layers inserted in an AlGaN matrix are proposed as a novel active region to develop a high-output-power UV light source. Such a structure is successfully achieved by precise control in molecular beam epitaxy and shows an amazing output power of ≈160 mW at 285 nm with a pulsed electron-beam excitation. This device is promising and competitive in non-line-of-sight communications or the sterilization field
Beschreibung:Date Completed 17.07.2018
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201600990