Atomic Layers Tellurium-Assisted Epitaxial Growth of Large-Area, Highly Crystalline ReS2 Atomic Layers on Mica Substrate (Adv. Mater. 25/2016)

Atomic Layers : Tellurium-Assisted Epitaxial Growth of Large-Area, Highly Crystalline ReS2 Atomic Layers on Mica Substrate (Adv. Mater. 25/2016)

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 25 vom: 05. Juli, Seite 5018
1. Verfasser: Cui, Fangfang (VerfasserIn)
Weitere Verfasser: Wang, Cong, Li, Xiaobo, Wang, Gang, Liu, Kaiqiang, Yang, Zhou, Feng, Qingliang, Liang, Xing, Zhang, Zhongyue, Liu, Shengzhong, Lei, Zhibin, Liu, Zonghuai, Xu, Hua, Zhang, Jin
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D anisotropic materials Re-Te binary eutectic epitaxial growth high crystal quality rhenium disulphide (ReS2)
Beschreibung
Zusammenfassung:© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
H. Xu, J. Zhang, and co-workers synthesize anisotropic 2D-layered rhenium disulfide with high crystal quality and uniform monolayer thickness. As described on page 5019, tellurium-assisted epitaxial growth on a mica substrate is chosen to generate such structures
Beschreibung:Date Completed 17.07.2018
Date Revised 30.09.2020
published: Print
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201670175