Nanoscale Transformations in Metastable, Amorphous, Silicon-Rich Silica

Nanoscale Transformations in Metastable, Amorphous, Silicon-Rich Silica

© 2016 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 34 vom: 23. Sept., Seite 7486-93
1. Verfasser: Mehonic, Adnan (VerfasserIn)
Weitere Verfasser: Buckwell, Mark, Montesi, Luca, Munde, Manveer Singh, Gao, David, Hudziak, Stephen, Chater, Richard J, Fearn, Sarah, McPhail, David, Bosman, Michel, Shluger, Alexander L, Kenyon, Anthony J
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article amorphous oxides electrical stress oxide nanostructure resistive switching
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520 |a Electrically biasing thin films of amorphous, substoichiometric silicon oxide drives surprisingly large structural changes, apparent as density variations, oxygen movement, and ultimately, emission of superoxide ions. Results from this fundamental study are directly relevant to materials that are increasingly used in a range of technologies, and demonstrate a surprising level of field-driven local reordering of a random oxide network 
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700 1 |a Munde, Manveer Singh  |e verfasserin  |4 aut 
700 1 |a Gao, David  |e verfasserin  |4 aut 
700 1 |a Hudziak, Stephen  |e verfasserin  |4 aut 
700 1 |a Chater, Richard J  |e verfasserin  |4 aut 
700 1 |a Fearn, Sarah  |e verfasserin  |4 aut 
700 1 |a McPhail, David  |e verfasserin  |4 aut 
700 1 |a Bosman, Michel  |e verfasserin  |4 aut 
700 1 |a Shluger, Alexander L  |e verfasserin  |4 aut 
700 1 |a Kenyon, Anthony J  |e verfasserin  |4 aut 
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