Novel Air Stable Organic Radical Semiconductor of Dimers of Dithienothiophene, Single Crystals, and Field-Effect Transistors

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 34 vom: 06. Sept., Seite 7466-71
1. Verfasser: Zhang, Hantang (VerfasserIn)
Weitere Verfasser: Dong, Huanli, Li, Yang, Jiang, Wei, Zhen, Yonggang, Jiang, Lang, Wang, Zhaohui, Chen, Wei, Wittmann, Angela, Hu, Wenping
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article field-effect transistors organic semiconductors radicals single crystals
LEADER 01000naa a22002652 4500
001 NLM261577794
003 DE-627
005 20231224195841.0
007 cr uuu---uuuuu
008 231224s2016 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201601502  |2 doi 
028 5 2 |a pubmed24n0871.xml 
035 |a (DE-627)NLM261577794 
035 |a (NLM)27322939 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Zhang, Hantang  |e verfasserin  |4 aut 
245 1 0 |a Novel Air Stable Organic Radical Semiconductor of Dimers of Dithienothiophene, Single Crystals, and Field-Effect Transistors 
264 1 |c 2016 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 17.07.2018 
500 |a Date Revised 01.10.2020 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a Singly linked and vinyl-linked dimers of dithienothiophenes exhibit different electronic behaviors. Single crystals of the singly linked dimer show a high conductivity of 0.265 S cm(-1) , five orders of magnitude higher than that of the vinyl-linked dimer. The huge increase in the hole density of singly linked dimers results from the formation of radicals, which can be reversibly tuned by facile thermal de-doping 
650 4 |a Journal Article 
650 4 |a field-effect transistors 
650 4 |a organic semiconductors 
650 4 |a radicals 
650 4 |a single crystals 
700 1 |a Dong, Huanli  |e verfasserin  |4 aut 
700 1 |a Li, Yang  |e verfasserin  |4 aut 
700 1 |a Jiang, Wei  |e verfasserin  |4 aut 
700 1 |a Zhen, Yonggang  |e verfasserin  |4 aut 
700 1 |a Jiang, Lang  |e verfasserin  |4 aut 
700 1 |a Wang, Zhaohui  |e verfasserin  |4 aut 
700 1 |a Chen, Wei  |e verfasserin  |4 aut 
700 1 |a Wittmann, Angela  |e verfasserin  |4 aut 
700 1 |a Hu, Wenping  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 28(2016), 34 vom: 06. Sept., Seite 7466-71  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:28  |g year:2016  |g number:34  |g day:06  |g month:09  |g pages:7466-71 
856 4 0 |u http://dx.doi.org/10.1002/adma.201601502  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 28  |j 2016  |e 34  |b 06  |c 09  |h 7466-71