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231224s2016 xx |||||o 00| ||eng c |
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|a 10.1021/acs.langmuir.6b01083
|2 doi
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|a pubmed24n0870.xml
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|a (DE-627)NLM261107941
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Wu, Kunjie
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Controlled Growth of Ultrathin Film of Organic Semiconductors by Balancing the Competitive Processes in Dip-Coating for Organic Transistors
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|c 2016
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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| 500 |
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|a Date Completed 18.07.2018
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|a Date Revised 18.07.2018
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a Ultrathin film with thickness below 15 nm of organic semiconductors provides excellent platform for some fundamental research and practical applications in the field of organic electronics. However, it is quite challenging to develop a general principle for the growth of uniform and continuous ultrathin film over large area. Dip-coating is a useful technique to prepare diverse structures of organic semiconductors, but the assembly of organic semiconductors in dip-coating is quite complicated, and there are no reports about the core rules for the growth of ultrathin film via dip-coating until now. In this work, we develop a general strategy for the growth of ultrathin film of organic semiconductor via dip-coating, which provides a relatively facile model to analyze the growth behavior. The balance between the three direct factors (nucleation rate, assembly rate, and recession rate) is the key to determine the growth of ultrathin film. Under the direction of this rule, ultrathin films of four organic semiconductors are obtained. The field-effect transistors constructed on the ultrathin film show good field-effect property. This work provides a general principle and systematic guideline to prepare ultrathin film of organic semiconductors via dip-coating, which would be highly meaningful for organic electronics as well as for the assembly of other materials via solution processes
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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1 |
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|a Li, Hongwei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Liqiang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Suna
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Xiaosong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xu, Zeyang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Xi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hu, Wenping
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chi, Lifeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Gao, Xike
|e verfasserin
|4 aut
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| 700 |
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|a Meng, Yancheng
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 32(2016), 25 vom: 28. Juni, Seite 6246-54
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnns
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| 773 |
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|g volume:32
|g year:2016
|g number:25
|g day:28
|g month:06
|g pages:6246-54
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|u http://dx.doi.org/10.1021/acs.langmuir.6b01083
|3 Volltext
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