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231224s2016 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201601721
|2 doi
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|a eng
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1 |
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|a Wang, Xingfu
|e verfasserin
|4 aut
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|a Piezotronic Effect Modulated Heterojunction Electron Gas in AlGaN/AlN/GaN Heterostructure Microwire
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|c 2016
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 17.07.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The piezotronic effect is applied to modulate the physical properties of heterojunction electron gas and thus tune the electric transport in AlGaN/AlN/GaN heterostructure microwires. At room temperature, the conductance is increased by 165% under -1.78% compressive strains, and reduced by 48% under 1.78% tensile strains; at 77 K, this modulating effect is further improved by 890% and 940% under compressive and tensile strains, respectively
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|a Journal Article
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|a AlGaN/AlN/GaN
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|a electron gas
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|a heterojunctions
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|a microwires
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|a piezotronic effect
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|a Yu, Ruomeng
|e verfasserin
|4 aut
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1 |
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|a Jiang, Chunyan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hu, Weiguo
|e verfasserin
|4 aut
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|a Wu, Wenzhuo
|e verfasserin
|4 aut
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|a Ding, Yong
|e verfasserin
|4 aut
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|a Peng, Wenbo
|e verfasserin
|4 aut
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|a Li, Shuti
|e verfasserin
|4 aut
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|a Wang, Zhong Lin
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 28(2016), 33 vom: 01. Sept., Seite 7234-42
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:28
|g year:2016
|g number:33
|g day:01
|g month:09
|g pages:7234-42
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|u http://dx.doi.org/10.1002/adma.201601721
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