Ultrafast Response p-Si/n-ZnO Heterojunction Ultraviolet Detector Based on Pyro-Phototronic Effect

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 32 vom: 28. Aug., Seite 6880-6
1. Verfasser: Wang, Zhaona (VerfasserIn)
Weitere Verfasser: Yu, Ruomeng, Wang, Xingfu, Wu, Wenzhuo, Wang, Zhong Lin
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article UV photodetectors ZnO nanowires heterostructures pyro-phototronic effect
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520 |a A light-self-induced pyro-phototronic effect in wurtzite ZnO nanowires is proposed as an effective approach to achieve ultrafast response ultraviolet sensing in p-Si/n-ZnO heterostructures. The relatively long response/recovery time of zinc-oxide-based ultraviolet sensors in air/vacuum has long been an obstacle to developing such detectors for practical applications. The response/recovery time and photoresponsivity are greatly improved by the pyro-phototronic effect 
650 4 |a Journal Article 
650 4 |a UV photodetectors 
650 4 |a ZnO nanowires 
650 4 |a heterostructures 
650 4 |a pyro-phototronic effect 
700 1 |a Yu, Ruomeng  |e verfasserin  |4 aut 
700 1 |a Wang, Xingfu  |e verfasserin  |4 aut 
700 1 |a Wu, Wenzhuo  |e verfasserin  |4 aut 
700 1 |a Wang, Zhong Lin  |e verfasserin  |4 aut 
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