Thickness Dependence of the Quantum Anomalous Hall Effect in Magnetic Topological Insulator Films

Thickness Dependence of the Quantum Anomalous Hall Effect in Magnetic Topological Insulator Films

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 30 vom: 01. Aug., Seite 6386-90
1. Verfasser: Feng, Xiao (VerfasserIn)
Weitere Verfasser: Feng, Yang, Wang, Jing, Ou, Yunbo, Hao, Zhenqi, Liu, Chang, Zhang, Zuocheng, Zhang, Liguo, Lin, Chaojing, Liao, Jian, Li, Yongqing, Wang, Li-Li, Ji, Shuai-Hua, Chen, Xi, Ma, Xucun, Zhang, Shou-Cheng, Wang, Yayu, He, Ke, Xue, Qi-Kun
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article magnetic topological insulators quantum anomalous Hall effect thickness dependence thin films
Beschreibung
Zusammenfassung:© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
The evolution of the quantum anomalous Hall effect with the thickness of Cr-doped (Bi,Sb)2 Te3 magnetic topological insulator films is studied, revealing how the effect is caused by the interplay of the surface states, band-bending, and ferromagnetic exchange energy. Homogeneity in ferromagnetism is found to be the key to high-temperature quantum anomalous Hall material
Beschreibung:Date Completed 17.07.2018
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201600919