Flexible MgO Barrier Magnetic Tunnel Junctions

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 25 vom: 03. Juli, Seite 4983-90
1. Verfasser: Loong, Li Ming (VerfasserIn)
Weitere Verfasser: Lee, Wonho, Qiu, Xuepeng, Yang, Ping, Kawai, Hiroyo, Saeys, Mark, Ahn, Jong-Hyun, Yang, Hyunsoo
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article flexible electronics magnetic tunnel junctions spintronics strain engineering tunneling magnetoresistance
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520 |a Flexible MgO barrier magnetic tunnel junction (MTJ) devices are fabricated using a transfer printing process. The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of ≈300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process. This approach could be useful for flexible electronic systems that require high-performance memory components 
650 4 |a Journal Article 
650 4 |a flexible electronics 
650 4 |a magnetic tunnel junctions 
650 4 |a spintronics 
650 4 |a strain engineering 
650 4 |a tunneling magnetoresistance 
700 1 |a Lee, Wonho  |e verfasserin  |4 aut 
700 1 |a Qiu, Xuepeng  |e verfasserin  |4 aut 
700 1 |a Yang, Ping  |e verfasserin  |4 aut 
700 1 |a Kawai, Hiroyo  |e verfasserin  |4 aut 
700 1 |a Saeys, Mark  |e verfasserin  |4 aut 
700 1 |a Ahn, Jong-Hyun  |e verfasserin  |4 aut 
700 1 |a Yang, Hyunsoo  |e verfasserin  |4 aut 
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