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231224s2016 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201600062
|2 doi
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|a pubmed24n0865.xml
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|a (NLM)27119207
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|a DE-627
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|e rakwb
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|a eng
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|a Loong, Li Ming
|e verfasserin
|4 aut
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|a Flexible MgO Barrier Magnetic Tunnel Junctions
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|c 2016
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|a Text
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|2 rdacontent
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 17.07.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Flexible MgO barrier magnetic tunnel junction (MTJ) devices are fabricated using a transfer printing process. The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of ≈300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process. This approach could be useful for flexible electronic systems that require high-performance memory components
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|a Journal Article
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|a flexible electronics
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|a magnetic tunnel junctions
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|a spintronics
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|a strain engineering
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|a tunneling magnetoresistance
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|a Lee, Wonho
|e verfasserin
|4 aut
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|a Qiu, Xuepeng
|e verfasserin
|4 aut
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|a Yang, Ping
|e verfasserin
|4 aut
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|a Kawai, Hiroyo
|e verfasserin
|4 aut
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|a Saeys, Mark
|e verfasserin
|4 aut
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|a Ahn, Jong-Hyun
|e verfasserin
|4 aut
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|a Yang, Hyunsoo
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 28(2016), 25 vom: 03. Juli, Seite 4983-90
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:28
|g year:2016
|g number:25
|g day:03
|g month:07
|g pages:4983-90
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|u http://dx.doi.org/10.1002/adma.201600062
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