On the Quantum Spin Hall Gap of Monolayer 1T'-WTe2

On the Quantum Spin Hall Gap of Monolayer 1T'-WTe2

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 24 vom: 04. Juni, Seite 4845-51
1. Verfasser: Zheng, Feipeng (VerfasserIn)
Weitere Verfasser: Cai, Chaoyi, Ge, Shaofeng, Zhang, Xuefeng, Liu, Xin, Lu, Hong, Zhang, Yudao, Qiu, Jun, Taniguchi, Takashi, Watanabe, Kenji, Jia, Shuang, Qi, Jingshan, Chen, Jian-Hao, Sun, Dong, Feng, Ji
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Schottcky junctions density functional theory quantum spin Hall effect ultra-fast spectroscopy
Beschreibung
Zusammenfassung:© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Positive quantum spin Hall gap in mono-layer 1T'-WTe2 is consistently supported by density-functional theory calculations, ultrafast pump-probe, and electrical transport measurements. It is argued that monolayer 1T'-WTe2 , which was predicted to be a semimetallic quantum spin Hall material, is likely a truly 2D quantum spin Hall insulator with a positive quantum spin Hall gap
Beschreibung:Date Completed 17.07.2018
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201600100