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231224s2016 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201600575
|2 doi
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|a eng
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|a Wang, Yu-Qi
|e verfasserin
|4 aut
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|a Spontaneous Formation of a Superconductor-Topological Insulator-Normal Metal Layered Heterostructure
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|c 2016
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|a Date Completed 17.07.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a 2D materials with heterolayered structures beyond graphene are explored. A theoretically predicted superconductor-topological insulator-normal metal heterolayered structure is realized experimentally. The generated hybrid structure HfTe3 /HfTe5 /Hf has potential applications in both quantum-spin Hall effect-based and Majorana-based devices
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|a Journal Article
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|a HfTe3
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|a HfTe5
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|a epitaxial growth
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|a layered heterostructures
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|a superconductivity
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|a Wu, Xu
|e verfasserin
|4 aut
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|a Wang, Ye-Liang
|e verfasserin
|4 aut
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|a Shao, Yan
|e verfasserin
|4 aut
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|a Lei, Tao
|e verfasserin
|4 aut
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|a Wang, Jia-Ou
|e verfasserin
|4 aut
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|a Zhu, Shi-Yu
|e verfasserin
|4 aut
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|a Guo, Haiming
|e verfasserin
|4 aut
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|a Zhao, Ling-Xiao
|e verfasserin
|4 aut
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|a Chen, Gen-Fu
|e verfasserin
|4 aut
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|a Nie, Simin
|e verfasserin
|4 aut
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|a Weng, Hong-Ming
|e verfasserin
|4 aut
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|a Ibrahim, Kurash
|e verfasserin
|4 aut
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|a Dai, Xi
|e verfasserin
|4 aut
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|a Fang, Zhong
|e verfasserin
|4 aut
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|a Gao, Hong-Jun
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 28(2016), 25 vom: 01. Juli, Seite 5013-7
|w (DE-627)NLM098206397
|x 1521-4095
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|g volume:28
|g year:2016
|g number:25
|g day:01
|g month:07
|g pages:5013-7
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