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231224s2016 xx |||||o 00| ||eng c |
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|a 10.1021/acs.langmuir.6b00628
|2 doi
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| 028 |
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|a eng
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|a Sun, Yu
|e verfasserin
|4 aut
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| 245 |
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|a Infrared Absorption Enhancement by Charge Transfer in Ga-GaSb Metal-Semiconductor Nanohybrids
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|c 2016
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|a Text
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|a ƒaComputermedien
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|a Date Completed 18.05.2018
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|a Date Revised 18.05.2018
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a We fabricated Ga-GaSb nanohybrids by the droplet epitaxy method and precisely tuned the interaction between the metal and semiconductor parts. Selective absorption enhancement from 1.2 to 1.3 μm was confirmed via ultraviolet-visible-infrared absorption spectra in all of the nanohybrids, which shows size and component dependence. Valence band spectra of the samples indicate that carrier separation occurs at the interface at the Schottky junction and the high density of states near the Fermi level in a semiconductor controls the process of charge transfer. Thus, the enhanced selective absorption in the infrared region will open up a broad prospect for applications in infrared detection and thermophotovoltaic cells
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Yuan, Long
|e verfasserin
|4 aut
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1 |
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|a Wu, Xiaofeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cong, Yingge
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Huang, Keke
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Feng, Shouhua
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 32(2016), 17 vom: 03. Mai, Seite 4189-93
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|g year:2016
|g number:17
|g day:03
|g month:05
|g pages:4189-93
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|u http://dx.doi.org/10.1021/acs.langmuir.6b00628
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