Graphene Coupled with Silicon Quantum Dots for High-Performance Bulk-Silicon-Based Schottky-Junction Photodetectors

Graphene Coupled with Silicon Quantum Dots for High-Performance Bulk-Silicon-Based Schottky-Junction Photodetectors

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 24 vom: 02. Juni, Seite 4912-9
1. Verfasser: Yu, Ting (VerfasserIn)
Weitere Verfasser: Wang, Feng, Xu, Yang, Ma, Lingling, Pi, Xiaodong, Yang, Deren
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article antireflection charge transfer graphene photodetectors silicon quantum dots
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520 |a Graphene is coupled with silicon quantum dots (Si QDs) on top of bulk Si to form a hybrid photodetector. Si QDs cause an increase of the built-in potential of the graphene/Si Schottky junction while reducing the optical reflection of the photodetector. Both the electrical and optical contributions of Si QDs enable a superior performance of the photodetector 
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700 1 |a Xu, Yang  |e verfasserin  |4 aut 
700 1 |a Ma, Lingling  |e verfasserin  |4 aut 
700 1 |a Pi, Xiaodong  |e verfasserin  |4 aut 
700 1 |a Yang, Deren  |e verfasserin  |4 aut 
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