Oriented Growth of Pb1- x Snx Te Nanowire Arrays for Integration of Flexible Infrared Detectors

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 18 vom: 28. Mai, Seite 3596-601
1. Verfasser: Wang, Qisheng (VerfasserIn)
Weitere Verfasser: Li, Jie, Lei, Yin, Wen, Yao, Wang, Zhenxing, Zhan, Xueying, Wang, Feng, Wang, Fengmei, Huang, Yun, Xu, Kai, He, Jun
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Pb1−xSnxTe nanowire arrays flexible infrared detectors guided growth integrated devices systems
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520 |a Assembling nanowires into highly ordered arrays is crucial for developing integration circuits. Oriented growth of mid-infrared Pb1- x Snx Te nanowire arrays on bendable mica, extending the function of existing nanowire arrays, is reported. The flexible photodetectors of these nanowire arrays show a high photoresponsivity of 276 A W(-1) (at 800 nm), which is higher than many previously reported infrared nanosensors 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
650 4 |a Pb1−xSnxTe nanowire arrays 
650 4 |a flexible infrared detectors 
650 4 |a guided growth 
650 4 |a integrated devices systems 
700 1 |a Li, Jie  |e verfasserin  |4 aut 
700 1 |a Lei, Yin  |e verfasserin  |4 aut 
700 1 |a Wen, Yao  |e verfasserin  |4 aut 
700 1 |a Wang, Zhenxing  |e verfasserin  |4 aut 
700 1 |a Zhan, Xueying  |e verfasserin  |4 aut 
700 1 |a Wang, Feng  |e verfasserin  |4 aut 
700 1 |a Wang, Fengmei  |e verfasserin  |4 aut 
700 1 |a Huang, Yun  |e verfasserin  |4 aut 
700 1 |a Xu, Kai  |e verfasserin  |4 aut 
700 1 |a He, Jun  |e verfasserin  |4 aut 
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