Proton-Conducting Graphene Oxide-Coupled Neuron Transistors for Brain-Inspired Cognitive Systems

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 18 vom: 14. Mai, Seite 3557-63
1. Verfasser: Wan, Chang Jin (VerfasserIn)
Weitere Verfasser: Zhu, Li Qiang, Liu, Yang Hui, Feng, Ping, Liu, Zhao Ping, Cao, Hai Liang, Xiao, Peng, Shi, Yi, Wan, Qing
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't neuromorphic engineering neuron transistors proton-conducting graphene oxide Oxides Protons Graphite 7782-42-5
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520 |a Proton-conducting graphene oxide electrolyte films with very high electric-double-layer capacitance are used as the gate dielectrics for oxide-based neuron transistor fabrication. Paired-pulse facilitation, dendritic integration, and orientation tuning are successfully emulated. Additionally, neuronal gain controls (arithmetic) are also experimentally demonstrated. The results provide a new-concept approach for building brain-inspired cognitive systems 
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700 1 |a Liu, Yang Hui  |e verfasserin  |4 aut 
700 1 |a Feng, Ping  |e verfasserin  |4 aut 
700 1 |a Liu, Zhao Ping  |e verfasserin  |4 aut 
700 1 |a Cao, Hai Liang  |e verfasserin  |4 aut 
700 1 |a Xiao, Peng  |e verfasserin  |4 aut 
700 1 |a Shi, Yi  |e verfasserin  |4 aut 
700 1 |a Wan, Qing  |e verfasserin  |4 aut 
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