p-Type MoS2 and n-Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 17 vom: 02. Mai, Seite 3391-8
1. Verfasser: Xue, Fei (VerfasserIn)
Weitere Verfasser: Chen, Libo, Chen, Jian, Liu, Jingbin, Wang, Longfei, Chen, Mengxiao, Pang, Yaokun, Yang, Xiaonian, Gao, Guoyun, Zhai, Junyi, Wang, Zhong Lin
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't diodes n-type ZnO p-type MoS2 photoresponse piezophototronic effect
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520 |a A plasma-induced p-type MoS2 flake and n-type ZnO film diode, which exhibits an excellent rectification ratio, is demonstrated. Under 365 nm optical irradiation, this p-n diode shows a strong photoresponse with an external quantum efficiency of 52.7% and a response time of 66 ms. By increasing the pressure on the junction to 23 MPa, the photocurrent can be enhanced by a factor of four through the piezophototronic effect 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
650 4 |a diodes 
650 4 |a n-type ZnO 
650 4 |a p-type MoS2 
650 4 |a photoresponse 
650 4 |a piezophototronic effect 
700 1 |a Chen, Libo  |e verfasserin  |4 aut 
700 1 |a Chen, Jian  |e verfasserin  |4 aut 
700 1 |a Liu, Jingbin  |e verfasserin  |4 aut 
700 1 |a Wang, Longfei  |e verfasserin  |4 aut 
700 1 |a Chen, Mengxiao  |e verfasserin  |4 aut 
700 1 |a Pang, Yaokun  |e verfasserin  |4 aut 
700 1 |a Yang, Xiaonian  |e verfasserin  |4 aut 
700 1 |a Gao, Guoyun  |e verfasserin  |4 aut 
700 1 |a Zhai, Junyi  |e verfasserin  |4 aut 
700 1 |a Wang, Zhong Lin  |e verfasserin  |4 aut 
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