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231224s2016 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201506472
|2 doi
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|a pubmed24n0860.xml
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|a (DE-627)NLM258046783
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|a (NLM)26936489
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|a DE-627
|b ger
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|a eng
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|a Xue, Fei
|e verfasserin
|4 aut
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|a p-Type MoS2 and n-Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect
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|c 2016
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 26.06.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A plasma-induced p-type MoS2 flake and n-type ZnO film diode, which exhibits an excellent rectification ratio, is demonstrated. Under 365 nm optical irradiation, this p-n diode shows a strong photoresponse with an external quantum efficiency of 52.7% and a response time of 66 ms. By increasing the pressure on the junction to 23 MPa, the photocurrent can be enhanced by a factor of four through the piezophototronic effect
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a diodes
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|a n-type ZnO
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|a p-type MoS2
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|a photoresponse
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|a piezophototronic effect
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|a Chen, Libo
|e verfasserin
|4 aut
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|a Chen, Jian
|e verfasserin
|4 aut
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|a Liu, Jingbin
|e verfasserin
|4 aut
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|a Wang, Longfei
|e verfasserin
|4 aut
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|a Chen, Mengxiao
|e verfasserin
|4 aut
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|a Pang, Yaokun
|e verfasserin
|4 aut
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|a Yang, Xiaonian
|e verfasserin
|4 aut
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|a Gao, Guoyun
|e verfasserin
|4 aut
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|a Zhai, Junyi
|e verfasserin
|4 aut
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| 700 |
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|a Wang, Zhong Lin
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 28(2016), 17 vom: 02. Mai, Seite 3391-8
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:28
|g year:2016
|g number:17
|g day:02
|g month:05
|g pages:3391-8
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|u http://dx.doi.org/10.1002/adma.201506472
|3 Volltext
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