Extremely Large Magnetoresistance at Low Magnetic Field by Coupling the Nonlinear Transport Effect and the Anomalous Hall Effect

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 14 vom: 13. Apr., Seite 2760-4
1. Verfasser: Luo, Zhaochu (VerfasserIn)
Weitere Verfasser: Xiong, Chengyue, Zhang, Xu, Guo, Zhen-Gang, Cai, Jianwang, Zhang, Xiaozhong
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article electron transport magnetic materials magnetoresistance nonlinear properties
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520 |a The anomalous Hall effect of a magnetic material is coupled to the nonlinear transport effect of a semiconductor material in a simple structure to achieve a large geometric magnetoresistance (MR) based on a diode-assisted mechanism. An extremely large MR (>10(4) %) at low magnetic fields (1 mT) is observed at room temperature. This MR device shows potential for use as a logic gate for the four basic Boolean logic operations 
650 4 |a Journal Article 
650 4 |a electron transport 
650 4 |a magnetic materials 
650 4 |a magnetoresistance 
650 4 |a nonlinear properties 
700 1 |a Xiong, Chengyue  |e verfasserin  |4 aut 
700 1 |a Zhang, Xu  |e verfasserin  |4 aut 
700 1 |a Guo, Zhen-Gang  |e verfasserin  |4 aut 
700 1 |a Cai, Jianwang  |e verfasserin  |4 aut 
700 1 |a Zhang, Xiaozhong  |e verfasserin  |4 aut 
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