Bandgap Engineering of Lead-Halide Perovskite-Type Ferroelectrics

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 13 vom: 06. Apr., Seite 2579-86
1. Verfasser: Ye, Heng-Yun (VerfasserIn)
Weitere Verfasser: Liao, Wei-Qiang, Hu, Chun-Li, Zhang, Yi, You, Yu-Meng, Mao, Jiang-Gao, Li, Peng-Fei, Xiong, Ren-Gen
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article bandgap engineering ferroelectricity metal halide perovskites phase transitions semiconductivity
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520 |a Semiconducting ferroelectricity is realized in hybrid perovskite-type compounds (cyclohexylammonium)2 PbBr4-4 x I4 x (x = 0-1). By adjusting the composition x, the bandgap is successfully tuned from previously reported 3.65 eV to as low as 2.74 eV, and the excellent ferroelectricity was kept intact. This finding may contribute to improving the photoelectronic and/or photovoltaic performance of hybrid perovskite-type compounds 
650 4 |a Journal Article 
650 4 |a bandgap engineering 
650 4 |a ferroelectricity 
650 4 |a metal halide perovskites 
650 4 |a phase transitions 
650 4 |a semiconductivity 
700 1 |a Liao, Wei-Qiang  |e verfasserin  |4 aut 
700 1 |a Hu, Chun-Li  |e verfasserin  |4 aut 
700 1 |a Zhang, Yi  |e verfasserin  |4 aut 
700 1 |a You, Yu-Meng  |e verfasserin  |4 aut 
700 1 |a Mao, Jiang-Gao  |e verfasserin  |4 aut 
700 1 |a Li, Peng-Fei  |e verfasserin  |4 aut 
700 1 |a Xiong, Ren-Gen  |e verfasserin  |4 aut 
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