Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 9 vom: 02. März, Seite 1818-23
1. Verfasser:	Chang, Hsiao-Yu (VerfasserIn)
Weitere Verfasser:	Yogeesh, Maruthi Nagavalli, Ghosh, Rudresh, Rai, Amritesh, Sanne, Atresh, Yang, Shixuan, Lu, Nanshu, Banerjee, Sanjay Kumar, Akinwande, Deji
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2016
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article 2D materials CVD-growth flexible electronics molybdenum disulfide radio frequency


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100	1		\|a Chang, Hsiao-Yu \|e verfasserin \|4 aut
245	1	0	\|a Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime
264		1	\|c 2016
336			\|a Text \|b txt \|2 rdacontent
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500			\|a Date Completed 29.06.2016
500			\|a Date Revised 01.10.2020
500			\|a published: Print-Electronic
500			\|a Citation Status PubMed-not-MEDLINE
520			\|a © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
520			\|a Flexible synthesized MoS2 transistors are advanced to perform at GHz speeds. An intrinsic cutoff frequency of 5.6 GHz is achieved and analog circuits are realized. Devices are mechanically robust for 10,000 bending cycles
650		4	\|a Journal Article
650		4	\|a 2D materials
650		4	\|a CVD-growth
650		4	\|a flexible electronics
650		4	\|a molybdenum disulfide
650		4	\|a radio frequency
700	1		\|a Yogeesh, Maruthi Nagavalli \|e verfasserin \|4 aut
700	1		\|a Ghosh, Rudresh \|e verfasserin \|4 aut
700	1		\|a Rai, Amritesh \|e verfasserin \|4 aut
700	1		\|a Sanne, Atresh \|e verfasserin \|4 aut
700	1		\|a Yang, Shixuan \|e verfasserin \|4 aut
700	1		\|a Lu, Nanshu \|e verfasserin \|4 aut
700	1		\|a Banerjee, Sanjay Kumar \|e verfasserin \|4 aut
700	1		\|a Akinwande, Deji \|e verfasserin \|4 aut
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773	1	8	\|g volume:28 \|g year:2016 \|g number:9 \|g day:02 \|g month:03 \|g pages:1818-23
856	4	0	\|u http://dx.doi.org/10.1002/adma.201504309 \|3 Volltext
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