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231224s2016 xx |||||o 00| ||eng c |
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|a 10.1021/acs.langmuir.5b03975
|2 doi
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|a pubmed24n0852.xml
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|a eng
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| 100 |
1 |
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|a Kotsuki, Kenji
|e verfasserin
|4 aut
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| 245 |
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|a Self-Aligned Growth of Organic Semiconductor Single Crystals by Electric Field
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|c 2016
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 26.05.2016
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|a Date Revised 30.03.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a We proposed a novel but facile method for growing organic semiconductor single-crystals via solvent vapor annealing (SVA) under electric field. In the conventional SVA growth process, nuclei of crystals appeared anywhere on the substrate and their crystallographic axes were randomly distributed. We applied electric field during the SVA growth of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) on the SiO2/Si substrate on which a pair of electrodes had been deposited beforehand. Real-time observation of the SVA process revealed that rodlike single crystals grew with their long axes parallel to the electric field and bridged the prepatterned electrodes. As a result, C8-BTBT crystals automatically formed a field effect transistor (FET) structure and the mobility reached 1.9 cm(2)/(V s). Electric-field-assisted SVA proved a promising method for constructing high-mobility single-crystal FETs at the desired position by a low-cost solution process
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Obata, Seiji
|e verfasserin
|4 aut
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| 700 |
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|a Saiki, Koichiro
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 32(2016), 2 vom: 19. Jan., Seite 644-9
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|x 1520-5827
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|g volume:32
|g year:2016
|g number:2
|g day:19
|g month:01
|g pages:644-9
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|u http://dx.doi.org/10.1021/acs.langmuir.5b03975
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