Highly Asymmetric n(+)-p Heterojunction Quantum-Dot Solar Cells with Significantly Improved Charge-Collection Efficiencies

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 9 vom: 02. März, Seite 1780-7
1. Verfasser: Choi, Min-Jae (VerfasserIn)
Weitere Verfasser: Kim, Sunchuel, Lim, Hunhee, Choi, Jaesuk, Sim, Dong Min, Yim, Soonmin, Ahn, Byung Tae, Kim, Jin Young, Jung, Yeon Sik
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article colloidal quantum dots depletion region width heavily doping metal oxides solar cells
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520 |a The depletion region width of metal-oxide/quantum-dot (QD) heterojunction solar cells is increased by a new method in which heavily boron-doped n(+)-ZnO is employed. It is effectively increased in the QD layer by 30% compared to the counterpart with conventional n-ZnO, and provides 41% and 37% improvement of J(sc) (16.7 mA cm(-2) to 23.5 mA cm(-2) ) and power conversion efficiency (5.52% to 7.55%), respectively 
650 4 |a Journal Article 
650 4 |a colloidal quantum dots 
650 4 |a depletion region width 
650 4 |a heavily doping 
650 4 |a metal oxides 
650 4 |a solar cells 
700 1 |a Kim, Sunchuel  |e verfasserin  |4 aut 
700 1 |a Lim, Hunhee  |e verfasserin  |4 aut 
700 1 |a Choi, Jaesuk  |e verfasserin  |4 aut 
700 1 |a Sim, Dong Min  |e verfasserin  |4 aut 
700 1 |a Yim, Soonmin  |e verfasserin  |4 aut 
700 1 |a Ahn, Byung Tae  |e verfasserin  |4 aut 
700 1 |a Kim, Jin Young  |e verfasserin  |4 aut 
700 1 |a Jung, Yeon Sik  |e verfasserin  |4 aut 
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