Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening

Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 3 vom: 20. Jan., Seite 547-52
1. Verfasser: Yu, Zhihao (VerfasserIn)
Weitere Verfasser: Ong, Zhun-Yong, Pan, Yiming, Cui, Yang, Xin, Run, Shi, Yi, Wang, Baigeng, Wu, Yun, Chen, Tangsheng, Zhang, Yong-Wei, Zhang, Gang, Wang, Xinran
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article interface mobility molybdenum disulfide (MoS2) phonon transport
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520 |a By combining a high-κ dielectric substrate and a high density of charge carriers, Coulomb impurities in MoS2 can be effectively screened, leading to an unprecedented room-temperature mobility of ≈150 cm(2) V(-1) s(-1) and room-temperature phonon-limited transport in a monolayer MoS2 transistor for the first time 
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700 1 |a Pan, Yiming  |e verfasserin  |4 aut 
700 1 |a Cui, Yang  |e verfasserin  |4 aut 
700 1 |a Xin, Run  |e verfasserin  |4 aut 
700 1 |a Shi, Yi  |e verfasserin  |4 aut 
700 1 |a Wang, Baigeng  |e verfasserin  |4 aut 
700 1 |a Wu, Yun  |e verfasserin  |4 aut 
700 1 |a Chen, Tangsheng  |e verfasserin  |4 aut 
700 1 |a Zhang, Yong-Wei  |e verfasserin  |4 aut 
700 1 |a Zhang, Gang  |e verfasserin  |4 aut 
700 1 |a Wang, Xinran  |e verfasserin  |4 aut 
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