Doping-Induced Carrier Density Modulation in Polymer Field-Effect Transistors

Doping-Induced Carrier Density Modulation in Polymer Field-Effect Transistors

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 1 vom: 06. Jan., Seite 57-62
1. Verfasser: Lee, Byoung Hoon (VerfasserIn)
Weitere Verfasser: Bazan, Guillermo C, Heeger, Alan J
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article contact resistance linear mobility organic electronics polymer field-effect transistors threshold voltage
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520 |a Controlled device parameters of high-mobility polymer field-effect transistors (FETs) are demonstrated by modest doping and charge compensation. Through fleeting chemical vapor treatments of aligned poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b']dithiophen-2-yl)-alt-[1,2,5]thiadiazolo-[3,4-c]pyridine] (PCDTPT) thin films as the charge transport layer in the FET channel, the FET properties are tailored by controlling doping concentration of the PCDTPT adjacent to metal electrodes 
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650 4 |a contact resistance 
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650 4 |a threshold voltage 
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700 1 |a Heeger, Alan J  |e verfasserin  |4 aut 
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