Phonon-Assisted Anti-Stokes Lasing in ZnTe Nanoribbons

Phonon-Assisted Anti-Stokes Lasing in ZnTe Nanoribbons

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 2 vom: 13. Jan., Seite 276-83
1. Verfasser: Zhang, Qing (VerfasserIn)
Weitere Verfasser: Liu, Xinfeng, Utama, M Iqbal Bakti, Xing, Guichuan, Sum, Tze Chien, Xiong, Qihua
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't anti-Stokes emission exciton-phonon coupling laser cooling upconversion lasing zinc telluride Zinc Compounds Tellurium NQA0O090ZJ
Beschreibung
Zusammenfassung:© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Phonon-assisted anti-Stokes emission and its stimulated emission in polar semiconductor ZnTe are demonstrated via the annihilation of phonons as a result of strong exciton-phonon coupling. The findings are not only important for developing high-power radiation-balanced lasers, but are also promising for manufacturing ultraefficient solid-state laser coolers
Beschreibung:Date Completed 15.12.2016
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201502154