Ultrathin SnSe2 Flakes Grown by Chemical Vapor Deposition for High-Performance Photodetectors

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 48 vom: 22. Dez., Seite 8035-41
1. Verfasser: Zhou, Xing (VerfasserIn)
Weitere Verfasser: Gan, Lin, Tian, Wenming, Zhang, Qi, Jin, Shengye, Li, Huiqiao, Bando, Yoshio, Golberg, Dmitri, Zhai, Tianyou
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D materials SnSe2 photodetectors responsivity time-resolved fluorescence spectroscopy
LEADER 01000naa a22002652 4500
001 NLM254372600
003 DE-627
005 20231224172229.0
007 cr uuu---uuuuu
008 231224s2015 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201503873  |2 doi 
028 5 2 |a pubmed24n0847.xml 
035 |a (DE-627)NLM254372600 
035 |a (NLM)26541236 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Zhou, Xing  |e verfasserin  |4 aut 
245 1 0 |a Ultrathin SnSe2 Flakes Grown by Chemical Vapor Deposition for High-Performance Photodetectors 
264 1 |c 2015 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 06.05.2016 
500 |a Date Revised 30.09.2020 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a High-quality ultrathin single-crystalline SnSe2 flakes are synthesized under atmospheric-pressure chemical vapor deposition for the first time. A high-performance photodetector based on the individual SnSe2 flake demonstrates a high photoresponsivity of 1.1 × 10(3) A W(-1), a high EQE of 2.61 × 10(5)%, and superb detectivity of 1.01 × 10(10) Jones, combined with fast rise and decay times of 14.5 and 8.1 ms, respectively 
650 4 |a Journal Article 
650 4 |a 2D materials 
650 4 |a SnSe2 
650 4 |a photodetectors 
650 4 |a responsivity 
650 4 |a time-resolved fluorescence spectroscopy 
700 1 |a Gan, Lin  |e verfasserin  |4 aut 
700 1 |a Tian, Wenming  |e verfasserin  |4 aut 
700 1 |a Zhang, Qi  |e verfasserin  |4 aut 
700 1 |a Jin, Shengye  |e verfasserin  |4 aut 
700 1 |a Li, Huiqiao  |e verfasserin  |4 aut 
700 1 |a Bando, Yoshio  |e verfasserin  |4 aut 
700 1 |a Golberg, Dmitri  |e verfasserin  |4 aut 
700 1 |a Zhai, Tianyou  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 27(2015), 48 vom: 22. Dez., Seite 8035-41  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:27  |g year:2015  |g number:48  |g day:22  |g month:12  |g pages:8035-41 
856 4 0 |u http://dx.doi.org/10.1002/adma.201503873  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 27  |j 2015  |e 48  |b 22  |c 12  |h 8035-41