All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of MoS2 /Graphene Heterostructures
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 44 vom: 25. Nov., Seite 7086-92 |
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1. Verfasser: | |
Weitere Verfasser: | , , , , , , , , , , , , |
Format: | Online-Aufsatz |
Sprache: | English |
Veröffentlicht: |
2015
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Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.) |
Schlagworte: | Journal Article Research Support, Non-U.S. Gov't exciton binding energies graphene heterostructures intrinsic bandgaps quasi-freestanding MoS2 scanning tunneling microscopy Disulfides Gold 7440-57-5 mehr... |
Zusammenfassung: | © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. A facile all-chemical vapor deposition approach is designed, which allows both sequentially grown Gr and monolayer MoS2 in the same growth process, thus allowing the direct construction of MoS2 /Gr vertical heterostructures on Au foils. A weak n-doping effect and an intrinsic bandgap of MoS2 are obtained from MoS2 /Gr/Au via scanning tunneling microscopy and spectroscopy characterization. The exciton binding energy is accurately deduced by combining photoluminescence measurements |
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Beschreibung: | Date Completed 20.09.2016 Date Revised 30.09.2020 published: Print-Electronic Citation Status MEDLINE |
ISSN: | 1521-4095 |
DOI: | 10.1002/adma.201503342 |