Ultrahigh and Broad Spectral Photodetectivity of an Organic-Inorganic Hybrid Phototransistor for Flexible Electronics

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 43 vom: 18. Nov., Seite 6885-91
1. Verfasser: Rim, You Seung (VerfasserIn)
Weitere Verfasser: Yang, Yang Micheal, Bae, Sang-Hoon, Chen, Huajun, Li, Chao, Goorsky, Mark S, Yang, Yang
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article bulk heterojunctions low bandgap polymers oxide semiconductors phototransistors solution processes
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520 |a The creation of new organic-inorganic phototransistors with high and broad spectral photosensitivity is reported. The extended charge transport and photoconductivity between the layers in the bilayer structure results in a notable detectivity of over 10(12) Jones and a linear dynamic range of over 100 dB at a broad spectral bandwidth across the UV-NIR range. Furthermore, the considerably reduced persistent photocurrent effect of In-Ga-Zn-O (IGZO)-based hybrid phototransistors is first demonstrated via an organic-inorganic bilayer approach 
650 4 |a Journal Article 
650 4 |a bulk heterojunctions 
650 4 |a low bandgap polymers 
650 4 |a oxide semiconductors 
650 4 |a phototransistors 
650 4 |a solution processes 
700 1 |a Yang, Yang Micheal  |e verfasserin  |4 aut 
700 1 |a Bae, Sang-Hoon  |e verfasserin  |4 aut 
700 1 |a Chen, Huajun  |e verfasserin  |4 aut 
700 1 |a Li, Chao  |e verfasserin  |4 aut 
700 1 |a Goorsky, Mark S  |e verfasserin  |4 aut 
700 1 |a Yang, Yang  |e verfasserin  |4 aut 
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