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231224s2015 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201502413
|2 doi
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|a pubmed24n0844.xml
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|a (NLM)26418457
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|a DE-627
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|e rakwb
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|a eng
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|a Hamaguchi, Azusa
|e verfasserin
|4 aut
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|a Single-Crystal-Like Organic Thin-Film Transistors Fabricated from Dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) Precursor-Polystyrene Blends
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|c 2015
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 08.02.2016
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a High-mobility short-channel organic thin-film transistors fabricated using a dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]-thio--phene (DNTT) precursor (5,14-N--phenylmaleimide DNTT, endo-isomer-rich fraction) and polystyrene (PS) blends are reported. The DNTT grains are "single-crystal"-like and the field-effect mobility of the devices ranges up to 4.7 cm(2) V(-1) s(-1). The PS layer functions as a hydrophobic passivation layer on the Si/SiO2 substrate
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|a Journal Article
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|a organic transistors
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|a solution-processable organic semiconductors
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|a thin-film transistors
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|a vertical phase separation
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|a Negishi, Tsuyoto
|e verfasserin
|4 aut
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|a Kimura, Yu
|e verfasserin
|4 aut
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|a Ikeda, Yoshinori
|e verfasserin
|4 aut
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|a Takimiya, Kazuo
|e verfasserin
|4 aut
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|a Bisri, Satria Zulkarnaen
|e verfasserin
|4 aut
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|a Iwasa, Yoshihiro
|e verfasserin
|4 aut
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|a Shiro, Takashi
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 27(2015), 42 vom: 09. Nov., Seite 6606-11
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:27
|g year:2015
|g number:42
|g day:09
|g month:11
|g pages:6606-11
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|u http://dx.doi.org/10.1002/adma.201502413
|3 Volltext
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