Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 40 vom: 28. Okt., Seite 6096-103
1. Verfasser:	Yuan, Xiaoming (VerfasserIn)
Weitere Verfasser:	Caroff, Philippe, Wong-Leung, Jennifer, Fu, Lan, Tan, Hark Hoe, Jagadish, Chennupati
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2015
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article GaAs growth mechanisms nanowires polarity surface energy


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500			\|a Date Completed 22.01.2016
500			\|a Date Revised 30.09.2020
500			\|a published: Print-Electronic
500			\|a Citation Status PubMed-not-MEDLINE
520			\|a © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
520			\|a Controllable axial switching of polarity in GaAs nanowires with minimal tapering and perfect twin-free ZB structure based on the fundamental understanding of nanowire growth and kinking mechanism is presented. The polarity of the bottom segment is confirmed to be (111)A by atomically resolved scanning transmission electron microscopy
650		4	\|a Journal Article
650		4	\|a GaAs
650		4	\|a growth mechanisms
650		4	\|a nanowires
650		4	\|a polarity
650		4	\|a surface energy
700	1		\|a Caroff, Philippe \|e verfasserin \|4 aut
700	1		\|a Wong-Leung, Jennifer \|e verfasserin \|4 aut
700	1		\|a Fu, Lan \|e verfasserin \|4 aut
700	1		\|a Tan, Hark Hoe \|e verfasserin \|4 aut
700	1		\|a Jagadish, Chennupati \|e verfasserin \|4 aut
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