Electrolyte-gated graphene Schottky barrier transistors

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 39 vom: 21. Okt., Seite 5875-81
1. Verfasser:	Kim, Beom Joon (VerfasserIn)
Weitere Verfasser:	Hwang, Euyheon, Kang, Moon Sung, Cho, Jeong Ho
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2015
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article Schottky barrier transistors graphene ion gels low-voltage operations organic semiconductors


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245	1	0	\|a Electrolyte-gated graphene Schottky barrier transistors
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500			\|a Date Completed 13.01.2016
500			\|a Date Revised 01.10.2020
500			\|a published: Print-Electronic
500			\|a Citation Status PubMed-not-MEDLINE
520			\|a © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
520			\|a A new device architecture for flexible vertical Schottky barrier (SB) transistors and logic gates based on graphene-organic-semiconductor-metal heterostructures and ion gel gate dielectrics is demonstrated. The devices show well-behaved p- and n-type characteristics under low-voltage operation (<1 V), yielding high current densities (>100 mA cm(-2) ) and on/off current ratios (>10(3) )
650		4	\|a Journal Article
650		4	\|a Schottky barrier transistors
650		4	\|a graphene
650		4	\|a ion gels
650		4	\|a low-voltage operations
650		4	\|a organic semiconductors
700	1		\|a Hwang, Euyheon \|e verfasserin \|4 aut
700	1		\|a Kang, Moon Sung \|e verfasserin \|4 aut
700	1		\|a Cho, Jeong Ho \|e verfasserin \|4 aut
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