Simulating Silicon Photomultiplier Response to Scintillation Light
The response of a Silicon Photomultiplier (SiPM) to optical signals is affected by many factors including photon-detection efficiency, recovery time, gain, optical crosstalk, afterpulsing, dark count, and detector dead time. Many of these parameters vary with overvoltage and temperature. When used t...
| Veröffentlicht in: | IEEE transactions on nuclear science. - 1988. - 30(2013), 1 vom: 15. Feb., Seite 336-351 |
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| Weitere Verfasser: | , , |
| Format: | Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2013
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| Zugriff auf das übergeordnete Werk: | IEEE transactions on nuclear science |
| Schlagworte: | Journal Article Circuit transient analysis Monte Carlo model electrical characteristics silicon photomultiplier single-photoelectron response |